- 1. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 2. Phys. Rev. B 12, 5824 (1975) , “Defects in Irradiated Silicon: EPR and Electron-Nuclear Double Resonance of Interstitial Boron”, G. D. Watkins.An EPR spectrum, labeled Si-G28, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4°K, presumably when a substitutional boron atom traps a mobile interstitial silicon atom which is produced in the original damage event. Three... (Read more)
Updated at 2010-07-20 16:50:39