- 1. phys. stat. sol. (a) 50, 237 (1978) , “High-Temperature Ion Implantation in Diamond”, Y. H. Lee, P. R. Brosious, J. W. CorbettC+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000Â°C) and ion-induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000Â°C results in a reduced spin density of â€œamorphousâ€ carbon by an... (Read more)
- 2. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
Updated at 2010-07-20 16:50:39