- 1. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 2. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 3. Phys. Rev. 109, 1172 (1958) , “Hfs Anomaly of Sb121 and Sb123 Determined by the Electron Nuclear Double Resonance Technique”, J. Eisinger, G. Feher.The ratios of the hyperfine interaction constants "a" and the nuclear g factors of the stable isotopes of antimony have been measured. From these measurements the hyperfine structure anomaly, defined as Δ=(a121/a123)(g123/g121)-1, was found to be... (Read more)
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